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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/CthLS
Repositorysid.inpe.br/marciana/2004/06.15.16.35   (restricted access)
Last Update2007:11.19.12.35.50 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2004/06.15.16.35.51
Metadata Last Update2018:06.05.01.28.40 (UTC) administrator
Secondary KeyINPE-14921-PRE/9834
ISSN0169-4332
Citation KeyBaranauskasPeLiDoCo:1994:MoStLa
TitleMorphological studies of laser etching processes in self sustained CVD diamond wafers
Year1994
Monthmay
Access Date2024, Apr. 28
Secondary TypePRE PI
Number of Files1
Size237 KiB
2. Context
Author1 Baranauskas, V.
2 Peledb, A.
3 Trava-Airoldic
4 Limad, C. A. S.
5 Doia, I.
6 Coratc, E. J.
Group1 LAS-INPE-MCT-BR
Affiliation1 Electrical Engineering Faculty, Department of Semiconductors and Photonics, State University of Campinas, P.O. Box 6101, Campinas 13081-970-SP, Brazil
JournalApplied Surface Science
Volume80
Pages129-135
History (UTC)2006-09-28 22:36:01 :: administrator -> marciana ::
2007-11-19 12:35:51 :: marciana -> administrator ::
2018-06-05 01:28:40 :: administrator -> marciana :: 1994
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsCHEMICAL VAPOR-DEPOSITION
FILMS
GROWTH
AbstractThis study reports the first results obtained by cutting/etching high quality synthesized diamond wafers of thickness up to 525 m using a Nd: YAG laser. Energy pulses of 1â5 mJ, repetition rates of 100â50000 Hz and pulse width of 250 ns have been used. The diamond wafers/films were synthesized by CVD of carbon from a diluted methane/freon gas mixture in hydrogen using a hot-filament reactor. It was found that the laser-material cutting/etching mechanisms involve first the graphitization of the grains and then oxidation in air. SEM microscopy was used to observe the surface morphology of the laser cuts revealing a columnar CVD grain growth which is very useful for heat dissipation elements in electro-optical devices. It was found that for deep grooves the cutting width is limited by the grain size of the polycrystalline wafers/films. High profile cutting aspect ratios of the order of 7â12 were obtained. Specific cutting energies employed were of the order of 200 kJ/g.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Morphological studies of...
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4. Conditions of access and use
Languageen
Target Filemorphological studies of laser etching processes, baranauskas.pdf
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5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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