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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/CxdNd
Repositorysid.inpe.br/marciana/2004/06.22.10.54   (restricted access)
Last Update2008:02.19.11.54.24 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2004/06.22.10.54.02
Metadata Last Update2018:06.05.01.20.53 (UTC) administrator
Secondary KeyINPE-10740-PRE/6199
DOI10.1016/S0925-9635(01)00468-X
ISBN/ISSN0925-9635
ISSN0925-9635
Citation KeySilvaCoraSilv:2001:InCFAd
TitleInfluence of CF4 addition for HFCVD diamond growth on silicon nitride substrates
ProjectDIMARE: Diamante e materiais relacionados
Year2001
MonthNov.
Access Date2024, Apr. 27
Secondary TypePRE PI
Number of Files1
Size1794 KiB
2. Context
Author1 Silva, V. A.
2 Corat, Evaldo José
3 Silva, C. R. M.
Resume Identifier1
2 8JMKD3MGP5W/3C9JH33
Group1
2 LAS-INPE-MCT-BR
Affiliation1 Universidade de Aveiro, Department of Ceramic and Glass Engineering, Campus Universitário Santiago (UA.UIMC)
2 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
3 Centro Tecnico da Aeronautica (CTA.IAE.AMR)
JournalDiamond and Related Materials
Volume10
Number11
Pages2002-2009
History (UTC)2006-09-28 22:25:42 :: administrator -> marciana ::
2008-02-19 11:54:24 :: marciana -> administrator ::
2018-06-05 01:20:53 :: administrator -> marciana :: 2001
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsMATERIALS PHYSICS
Diamond films
Sintering
Silicon nitride
Halogen
Intergranular phases
FÍSICA DE MATERIAIS
Filmes de diamante
Nitrato de silicone
Halogêneo
Fase intergranular
AbstractThis work presents a study of CVD diamond growth on silicon nitride-based ceramics with the addition of carbon tetrafluoride (CF4) in a hot filament-assisted reactor (HFCVD). Silicon nitride substrates were hot pressed under a nitrogen atmosphere for 90 min at 1750 degreesC, giving specimens of very high density and good mechanical properties. The CF4 addition is known to bring several advantages to diamond growth and, in particular, in this work, an important interaction of the CF4-containing gas phase with the silicon nitride (Si3N4) substrates has been proven to be very beneficial for nucleation, growth and adherence of the diamond films. A basic gas mixture of H-2/1.5 vol.% CH4/0.5 vol.% CF4 was used in the growth experiments. The nucleation study reveals a strong interaction of the halogen-containing gas phase with the vitreous phase on the substrate surface. A strong erosion of the surface has been observed, which induced a high nucleation density (N-d) of the order of 10(8) particles cm(-2), without any surface pre-treatment. Silicon nitride surface analysis was performed with Raman and infrared specular reflectance spectroscopy. Results suggest the erosion of the vitreous phase, mainly the silica (SiO2) component, and the formation of silicon carbide, prior to diamond growth. Raman spectra and scanning electron microscopy (SEM) show better quality film grown with CF4 addition. Indentation tests with a Rockwell C tip, at variable charge, show a better film adherence if grown with CF4 addition.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Influence of CF4...
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4. Conditions of access and use
Languageen
Target Fileinfluence.pdf
User Groupadministrator
marciana
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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7. Description control
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