Close

1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/Cxjvk
Repositorysid.inpe.br/marciana/2004/06.22.15.20   (restricted access)
Last Update2008:04.01.12.50.41 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2004/06.22.15.20.43
Metadata Last Update2018:06.05.01.20.53 (UTC) administrator
Secondary KeyINPE-10743-PRE/6202
ISBN/ISSN0925-9635
ISSN0925-9635
Citation KeyGonçalvesSandIha:2002:ChBoDo
TitleCharacterization of boron doped CVD diamond films by Raman spectroscopy and X-ray diffractometry
ProjectTecnologia de plasma: Propulsão eletrostática
Year2002
MonthAug.
Access Date2024, Apr. 28
Secondary TypePRE PI
Number of Files1
Size499 KiB
2. Context
Author1 Gonçalves, José Américo Neves
2 Sandonato, Gilberto Marrega
3 Iha, K.
Resume Identifier1 8JMKD3MGP5W/3C9JHFN
2 8JMKD3MGP5W/3C9JHBA
Group1 LAP-INPE-MCT-BR
2 LAP-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasma (INPE.LAP)
2 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasma (INPE.LAP)
3 Instituto Tecnológico de Aeronáutica, Divisão de química (ITA)
Author e-Mail Address1 americo@plasma.inpe.br
JournalDiamond and Related Materials
Volume11
Number8
Pages1578-1583
History (UTC)2005-03-17 17:56:35 :: marciana -> administrator ::
2006-09-28 22:25:48 :: administrator -> marciana ::
2008-04-01 12:50:41 :: marciana -> administrator ::
2018-06-05 01:20:53 :: administrator -> marciana :: 2002
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsPLASMA
Diamond films
X-ray diffractometry
Raman spectroscopy
Lattice parameter
PLASMA
Filmes de diamante
Raio-x
Difractometria
Espectroscopia Raman
AbstractBoron doped diamond films grown by chemical vapor deposition on silicon (1 1 1) were measured by Raman spectroscopy and X-ray diffractometry to investigate the crystallographic direction and the lattice parameters of both the bSiC and diamond films with different levels of dopant. It was observed that the level of dopant has a significant influence on the lattice parameters for a boronycarbon ratio of 20 000 ppm, and also that the expansion of the lattice parameters was due to compressive thermal stress of diamond films.
AreaFISPLASMA
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAP > Characterization of boron...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languageen
Target Filecharacterization.pdf
User Groupadministrator
marciana
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ET2RFS
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Description control
e-Mail (login)marciana
update 


Close