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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/Cykni
Repositorysid.inpe.br/marciana/2004/06.24.09.21   (restricted access)
Last Update2005:02.14.02.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2004/06.24.09.21.38
Metadata Last Update2018:06.05.01.20.53 (UTC) administrator
Secondary KeyINPE-10748-PRE/6206
ISBN/ISSN0925-9635
ISSN0925-9635
Citation KeyFerreiraAbrCorLeiVJ:2001:StStHF
TitleStress study of HFCVD boron-doped diamond films by X-ray diffraction measurements
Year2001
Monthmarch-july
Access Date2024, Apr. 28
Secondary TypePRE PI
Number of Files1
Size261 KiB
2. Context
Author1 Ferreira, Neidenei Gomes
2 Abramof, Eduardo
3 Corat, Evaldo Jose
4 Leite, Nelia Ferreira
5 VJ, Trava-Airoldi
Resume Identifier1 8JMKD3MGP5W/3C9JHU3
2 8JMKD3MGP5W/3C9JGUH
3 8JMKD3MGP5W/3C9JH33
4 8JMKD3MGP5W/3C9JHU5
Group1 LAS-INPE-MCT-BR
JournalDiamond and Related Materials
Volume10
Number3-7
Pages750-754
History (UTC)2005-02-14 13:36:51 :: sergio -> administrator ::
2006-09-28 22:25:50 :: administrator -> sergio ::
2008-01-07 12:53:20 :: sergio -> administrator ::
2018-06-05 01:20:53 :: administrator -> marciana :: 2001
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Keywordsdiamond
boron doping
stress
X-ray diffraction
AbstractStress analysis on chemical vapor deposition (CVD) diamond films has demonstrated an apparent disagreement among various researchers in recent works even for similar deposition conditions. The type and the value of stress have shown a strong dependence on film thickness, which can be attributed to columnar growth and grain size and boundaries. X-Ray diffraction techniques appeared to be more suitable to study these effects and permit the evaluation of the average stress in larger sample areas when compared with micro-Raman spectroscopy, which feels a local strain inside the grains. In the case of boron-doped diamond films, boron incorporation on substitucional or interstitial sites can produce stresses according to the doping level. In order to investigate these effects, a series of diamond films were deposited on silicon (001) substrate in a hot filament (HF)-assisted CVD reactor at 800 degreesC. The CH4 flow is kept at 0.5 seem for all experiments and the H-2 and B2O3/CH3OH/H-2 flows are controlled in order to obtain the desired B/C ratios. Stress behavior in HFCVD boron-doped diamond films has been investigated by X-ray diffraction measurements using the sin(2) psi technique. Tensile and compressive stresses have been observed and the thermal and intrinsic components have been calculated. The diamond films were characterized by scanning electron microscopy and Raman spectroscopy. (C) 2001 Elsevier Science B.V. Pdl rights reserved.
AreaFISMAT
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4. Conditions of access and use
Languageen
Target Filestress corat.pdf
User Groupadministrator
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
Empty Fieldsaffiliation alternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Description control
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