| 1. Identity statement | |
| Reference Type | Journal Article |
| Site | mtc-m16.sid.inpe.br |
| Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
| Identifier | 6qtX3pFwXQZsFDuKxG/CyUM9 |
| Repository | sid.inpe.br/marciana/2004/06.25.11.27 (restricted access) |
| Last Update | 2005:06.01.03.00.00 (UTC) administrator |
| Metadata Repository | sid.inpe.br/marciana/2004/06.25.11.27.36 |
| Metadata Last Update | 2018:06.05.01.20.54 (UTC) administrator |
| Secondary Key | INPE-10764-PRE/6222 |
| ISBN/ISSN | 1350-4495 |
| ISSN | 1350-4495 |
| Citation Key | BoschettiBaClUeRaMoAb:2001:MoBeEp |
| Title | Molecular beam epitaxial growth of PbTe and PbSnTe on Si(100) substrates for heterojunction infrared detectors  |
| Year | 2001 |
| Month | apr. |
| Access Date | 2024, Apr. 28 |
| Secondary Type | PRE PI |
| Number of Files | 1 |
| Size | 52 KiB |
| 2. Context | |
| Author | 1 Boschetti, Cesar 2 Bandeira, Iraja Newton 3 Closs, Huberto 4 Ueta, Antonio Yokio 5 Rappl, Paulo Henrique de Oliveira 6 Motisuke, Paulo 7 Abramof, Eduardo |
| Resume Identifier | 1 8JMKD3MGP5W/3C9JGRJ 2 8JMKD3MGP5W/3C9JHDG 3 8JMKD3MGP5W/3C9JHCR 4 5 8JMKD3MGP5W/3C9JJ37 6 8JMKD3MGP5W/3C9JJ39 7 8JMKD3MGP5W/3C9JGUH |
| Group | 1 LAS-INPE-MCT-BR |
| Affiliation | 1 Instituto Nacional Pesquisas Espaciais - LAS 2 Instituto Tecnologico Aeronautica - Dept Engn Eletr & Computacao |
| Journal | Infrared Physics and Technology |
| Volume | 42 |
| Number | 2 |
| Pages | 91-99 |
| History (UTC) | 2005-06-01 12:10:48 :: sergio -> administrator :: 2007-04-03 21:30:08 :: administrator -> sergio :: 2008-01-07 12:53:21 :: sergio -> administrator :: 2018-06-05 01:20:54 :: administrator -> marciana :: 2001 |
| 3. Content and structure | |
| Is the master or a copy? | is the master |
| Content Stage | completed |
| Transferable | 1 |
| Content Type | External Contribution |
| Keywords | IV-VI compounds lead tin telluride molecular beam epitaxy IV-VI/Si heterostructures IV-VI infrared detectors |
| Abstract | We have investigated the molecular beam epitaxial (MBE) growth of the IV-VI compounds PbTe and PbSnTe directly on Si(1 0 0) substrates, by in situ reflection high energy electron diffraction characterization. PbTe/Si(1 0 0) heterostructures were previously obtained only by hot wall epitaxy, and were shown to work as room temperature heterojunction photovoltaic detectors for the mid-infrared band (3-5 mum). Present work has shown that IV-VI single crystal layers, crack-free and as thick as 0.5 mum, can be obtained by MBE on thermally deoxidized Si(1 0 0) substrates. The layers were found to be rotated by 45 degrees relative to the substrate azimuthal orientation, and their quality depended on the use of an additional Te flux. (C) 2001 Elsevier Science B.V. All rights reserved. |
| Area | FISMAT |
| Arrangement | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Molecular beam epitaxial... |
| doc Directory Content | access |
| source Directory Content | there are no files |
| agreement Directory Content | there are no files |
| 4. Conditions of access and use | |
| Language | en |
| Target File | molecular beam epitaxial.pdf |
| User Group | administrator |
| Visibility | shown |
| Copy Holder | SID/SCD |
| Archiving Policy | denypublisher denyfinaldraft24 |
| Read Permission | deny from all and allow from 150.163 |
| 5. Allied materials | |
| Next Higher Units | 8JMKD3MGPCW/3ESR3H2 |
| Dissemination | PORTALCAPES; COMPENDEX. |
| Host Collection | sid.inpe.br/banon/2003/08.15.17.40 |
| 6. Notes | |
| Empty Fields | alternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype |
| 7. Description control | |
| e-Mail (login) | marciana |
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