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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/CAEUR
Repositorysid.inpe.br/marciana/2004/06.28.11.21   (restricted access)
Last Update2005:06.01.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2004/06.28.11.21.26
Metadata Last Update2018:06.05.01.28.41 (UTC) administrator
Secondary KeyINPE-10769-PRE/6227
ISBN/ISSN022-2461
ISSN0022-2461
1573-4803
Citation KeyCoratTraLeiNonBar:1997:DiGrCF
TitleDiamond growth with CF4 addition in hot-filament chemical vapour deposition
Year1997
Monthfeb.
Access Date2024, Apr. 28
Secondary TypePRE PI
Number of Files1
Size402 KiB
2. Context
Author1 Corat, Evaldo Jose
2 Trava-Airoldi, Vladimir Jesus
3 Leite, Nelia Ferreira
4 Nono, Maria do Carmo de Andrade
5 Baranauskas, V.
Resume Identifier1 8JMKD3MGP5W/3C9JH33
2
3 8JMKD3MGP5W/3C9JHU5
4 8JMKD3MGP5W/3C9JHRC
Group1 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais - LAS
2 Univ. Estadual Campinas,Fac Elect Engn.
JournalJournal of Materials Science
Volume32
Number4
Pages941-947
History (UTC)2005-06-01 11:20:37 :: sergio -> administrator ::
2006-09-28 22:36:07 :: administrator -> sergio ::
2008-01-07 12:49:53 :: sergio -> administrator ::
2018-06-05 01:28:41 :: administrator -> marciana :: 1997
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsMicrowave-Plasma
Metastable Growth
Gas-Phase
Temperature
Reactor
Cvd
Tungsten
Surfaces
Films
AbstractTetrafluoromethane (CF4) was added to standard CH4/H-2 mixtures for diamond growth in hot-filament-assisted chemical vapour deposition. CF4 concentrations in the range of 0.3%-3% were studied. Mass spectrometry of the exhaust gas showed that only a small fraction (<15%) of CF4 was thermally dissociated for filament temperatures over 1800 degrees C. The observed stable products of its dissociation were mainly C2H2, CH4 and HF. This CF4 addition considerably enhanced the nucleation and growth characteristics on silicon and molybdenum. Diamond growth was observed with substrate temperature as low as 390 degrees C. A comparative study for the growth dependence on substrate temperature with and without CF4 addition in the gas mixture is presented. The growth rate was measured by post-growth weighing with a micro balance. An activation energy of 11 kcal mol(-1) for growth with CF4 addition was obtained. Raman spectra and atomic force microscopy were used to characterize the diamond films.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Diamond growth with...
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4. Conditions of access and use
Languageen
Target FileDiamond growth with CF4.pdf
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Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft12
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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7. Description control
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