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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/CSUEe
Repositorysid.inpe.br/marciana/2004/07.26.11.44   (restricted access)
Last Update2004:07.26.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2004/07.26.11.44.39
Metadata Last Update2018:06.05.01.21.00 (UTC) administrator
Secondary KeyINPE-10994-PRE/6450
ISSN0022-3093
Citation KeyAbramofFerrBeloUeta:2004:InNaPo
TitleInvestigation of nanostructured porous silicon by Raman spectroscopy and atomic force microscopy
Year2004
Access Date2024, Apr. 28
Secondary TypePRE PI
Number of Files1
Size366 KiB
2. Context
Author1 Abramof, Patrícia Guimarães
2 Ferreira, N. G.
3 Beloto, Antonio Fernando
4 Ueta, Antonio Yukio
Resume Identifier1
2
3 8JMKD3MGP5W/3C9JGJ8
4 8JMKD3MGP5W/3C9JGJU
Group1 LAS-INPE-MCT-BR
Affiliation1 Centro de Desenvolvimento de Tecnologia e Recursos Humanos
2 Centro T cnico Aeroespacial– Divisaão de Matetriais AMR/IAE/ CTA
3 Instituto Nacional de Pesquisas, Espaciais
JournalJournal of Non-Crystalline Solids
Volume338-40
Pages139-142
History (UTC)2006-01-23 10:09:47 :: marciana -> administrator ::
2018-06-05 01:21:00 :: administrator -> marciana :: 2004
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Keywordsstress
AbstractA set of porous silicon layers was produced by stain etching using a solution of HF:HNO3 in a composition ratio of 500:1 with etching time varying from 1 to 10 min. The residual stress and the correlation length of the layers were obtained through the analysis of the micro-Raman spectra using a phonon confinement model including a term to account for the amorphous phase. The correlation length, which corresponds to the crystallite size, is found to decrease as the etching time increases, and agrees with the values obtained by atomic force microscopy analysis. The residual compressive stress tends to increase with etching time, as expected by the smaller crystallite size. However, an oscillatory behavior is detected for etching times higher than 4 min. This result correlates well with the photoluminescence measurements and can be understood by the porous silicon layer formation observed with the atomic force microscopy.
AreaFISMAT
Arrangementurlib.net > LABAS > Investigation of nanostructured...
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4. Conditions of access and use
Languageen
Target Fileabramofinvestigation.pdf
User Groupadministrator
marciana
Visibilityshown
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Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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