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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/Dopg9
Repositorysid.inpe.br/marciana/2004/09.06.14.38   (restricted access)
Last Update2004:09.06.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2004/09.06.14.38.26
Metadata Last Update2021:07.28.21.26.29 (UTC) administrator
Secondary KeyINPE-11262-PRE/6704
ISBN/ISSN0038-1098
ISSN0038-1098
Citation KeySilvaDanMotCanFaz:1996:ImStNa
TitleImpurity states in the narrow band-gap semiconductor n-type InSb
ProjectMATCON: Física da Matéria Condensada
Year1996
MonthJuly
Access Date2024, Apr. 28
Secondary TypePRE PI
Number of Files1
Size236 KiB
2. Context
Author1 Silva, Antonio Ferreira da
2 Dantas, N. Souza
3 Mota, F. de Brito
4 Canuto, S.
5 Fazzio, A.
Resume Identifier1 8JMKD3MGP5W/3C9JGJC
Group1 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais-INPE, Laboratório Associado de Sensores e Materiais (INPE.LAS)
2 Instituto de Física, Universidade Federal da Bahia (UFBA)
3 Instituto de Física, Universidade de São Paulo (USP)
4 Instituto de Física, Universidade de São Paulo (USP)
5 Instituto de Física, Universidade de São Paulo (USP)
JournalSolid State Communication
Volume99
Number4
Pages295-297
History (UTC)2006-09-28 22:36:43 :: administrator -> sergio ::
2008-01-07 12:50:01 :: sergio -> marciana ::
2008-02-18 14:06:46 :: marciana -> administrator ::
2021-07-28 21:26:29 :: administrator -> marciana :: 1996
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsSENSORS AND MATERIALS
Disordered systems
Semiconductors
Impurities in semiconductors
Optical properties
Metal
SENSORES E MATERIAIS
Sistemas desordenados
Semicondutores
Impurezas
Propriedades ópticas
AbstractWe investigate impurity pair and triad formations in the narrow band-gap semiconductor n-doped InSb. It is found that in the region of the band-gap energy, Eg = 0.23 eV, at 0 K, the effects of such clusters play a relevant role in the optical properties around and below the ionization energy of an isolated impurity (i.e., Ei = 0.64 meV). The transition for the uncompensated system is obtained as the concentration of impurities exceeds Nc = 4.7 × 1013 cm−3.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Impurity states in...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languageen
Target Fileimpurity.pdf
User Groupadministrator
marciana
sergio
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Description control
e-Mail (login)marciana
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