| 1. Identity statement | |
| Reference Type | Journal Article |
| Site | mtc-m16.sid.inpe.br |
| Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
| Identifier | 6qtX3pFwXQZsFDuKxG/DTV8v |
| Repository | sid.inpe.br/marciana/2004/10.27.13.13 (restricted access) |
| Last Update | 2004:10.28.03.00.00 (UTC) administrator |
| Metadata Repository | sid.inpe.br/marciana/2004/10.27.13.13.57 |
| Metadata Last Update | 2018:06.05.01.28.47 (UTC) administrator |
| Secondary Key | INPE-11492-PRE/6896 |
| ISSN | 0038-1101 |
| Citation Key | NubileSilv:1997:BaNaSi |
| Title | Bandgap narrowing in silicon solar cells considering the p-type doping material  |
| Project | CELSOL: Células solares |
| Year | 1997 |
| Month | Jan. |
| Access Date | 2024, Apr. 28 |
| Secondary Type | PRE PI |
| Number of Files | 1 |
| Size | 260 KiB |
| 2. Context | |
| Author | 1 Nubile, Paulo 2 Silva, Antonio Ferreira da |
| Resume Identifier | 1 8JMKD3MGP5W/3C9JJ3D 2 8JMKD3MGP5W/3C9JGJC |
| Group | 1 LAS-INPE-MCT-BR 2 LAS-INPE-MCT-BR |
| Affiliation | 1 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS) 2 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS) |
| Journal | Solid State Electronics |
| Volume | 41 |
| Number | 1 |
| Pages | 121-124 |
| History (UTC) | 2004-10-28 18:13:33 :: marciana -> administrator :: 2007-04-04 23:56:50 :: administrator -> marciana :: 2008-02-27 12:33:08 :: marciana -> administrator :: 2018-06-05 01:28:47 :: administrator -> marciana :: 1997 |
| 3. Content and structure | |
| Is the master or a copy? | is the master |
| Content Stage | completed |
| Transferable | 1 |
| Content Type | External Contribution |
| Keywords | MATERIALS PHYSICS Bandgap Silicon solar cells FÍSICA DE MATERIAIS Células solares Silicone BGN |
| Abstract | Bandgap narrowing (BGN) in p-type silicon is a sensitive parameter for determining the performance of pn junction devices, like solar cells. Previous work in the existing literature does not take into account the dopant used as acceptor. Considering that the impurity energy level can vary from 46 meV above the valence band for Si:B, to 156 meV for Si:In, we studied how this variation affects the BGN. A general equation for BGN is derived as a function of the doping concentration and the impurity energy level. We calculate the BGN and critical concentrations for the metal-nonmetal transition for Si:B, Si:Ga, Si:AI and Si:In. The critical concentration varies from 5 x 10(18) cm(-3) for Si:B to 1.84 x 10(30) cm(-3) for Si:In. The impact of BGN on the open circuit voltage of monocrystalline silicon Solar cells is calculated as a function of the doping concentration. |
| Area | FISMAT |
| Arrangement | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Bandgap narrowing in... |
| doc Directory Content | access |
| source Directory Content | there are no files |
| agreement Directory Content | there are no files |
| 4. Conditions of access and use | |
| Language | en |
| Target File | bandgap narrowing.pdf |
| User Group | administrator marciana |
| Visibility | shown |
| Copy Holder | SID/SCD |
| Archiving Policy | denypublisher denyfinaldraft24 |
| Read Permission | deny from all and allow from 150.163 |
| 5. Allied materials | |
| Next Higher Units | 8JMKD3MGPCW/3ESR3H2 |
| Dissemination | WEBSCI; PORTALCAPES. |
| Host Collection | sid.inpe.br/banon/2003/08.15.17.40 |
| 6. Notes | |
| Empty Fields | alternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype |
| 7. Description control | |
| e-Mail (login) | marciana |
| update | |