| 1. Identity statement | |
| Reference Type | Journal Article |
| Site | mtc-m16.sid.inpe.br |
| Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
| Identifier | 6qtX3pFwXQZsFDuKxG/Epot4 |
| Repository | sid.inpe.br/marciana/2004/12.08.15.11 (restricted access) |
| Last Update | 2004:12.08.02.00.00 (UTC) administrator |
| Metadata Repository | sid.inpe.br/marciana/2004/12.08.15.11.09 |
| Metadata Last Update | 2018:06.05.01.21.12 (UTC) administrator |
| Secondary Key | INPE-11785-PRE/7144 |
| ISSN | 0103-9733 |
| Citation Key | BarrosAbrRapUetClo:2004:ChPbPn |
| Title | Characterization of PbTe p-n(+) junction grown by molecular beam epitaxy  |
| Year | 2004 |
| Month | jun. |
| Access Date | 2024, Apr. 28 |
| Secondary Type | PRE PN |
| Number of Files | 1 |
| Size | 83 KiB |
| 2. Context | |
| Author | 1 Barros, André Santiago 2 Abramof, Eduardo 3 Rappl, Paulo Henrique de Oliveira 4 Ueta, Antonio Yukio 5 Closs, Huberto |
| Resume Identifier | 1 2 8JMKD3MGP5W/3C9JGUH 3 8JMKD3MGP5W/3C9JJ37 4 8JMKD3MGP5W/3C9JGJU 5 8JMKD3MGP5W/3C9JHCR |
| Group | 1 LAS-INPE-MCT-BR |
| Affiliation | 1 Instituto Nacional de Pesquisas Espaciais (INPE) |
| Journal | Brazilian Journal of Physics |
| Volume | 34 |
| Number | 2B |
| Pages | 641-643 |
| History (UTC) | 2006-01-23 10:20:12 :: sergio -> administrator :: 2006-09-28 22:28:22 :: administrator -> sergio :: 2008-01-07 12:53:40 :: sergio -> administrator :: 2008-06-10 22:28:19 :: administrator -> marciana :: 2011-05-20 05:28:48 :: marciana -> administrator :: 2018-06-05 01:21:12 :: administrator -> marciana :: 2004 |
| 3. Content and structure | |
| Is the master or a copy? | is the master |
| Content Stage | completed |
| Transferable | 1 |
| Content Type | External Contribution |
| Keywords | INFRARED DETECTORS LAYERS |
| Abstract | In this work we investigate the electrical properties of PbTe p - n(+) junction. Mesa diodes were fabricated from p - n(+) PbTe layers grown on (111) BaF2 substrates by molecular beam epitaxy. From the analysis of the current versus voltage characteristic measured at 80K, the incremental differential resistance and the series resistance were determined. The capacitance versus voltage curves were measured at a frequency of 1MHz. The one-sided abrupt junction was checked through the 1/C(2)xV plot. From the linear fit, the hole concentration and the depletion layer width in the p-side were obtained. The high detectivity values measured for the p - n(+) PbTe diode confirm that it is very suitable for infrared detection. |
| Area | FISMAT |
| Arrangement | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Characterization of PbTe... |
| doc Directory Content | access |
| source Directory Content | there are no files |
| agreement Directory Content | there are no files |
| 4. Conditions of access and use | |
| Language | en |
| Target File | v34_641.pdf |
| User Group | administrator sergio |
| Visibility | shown |
| Copy Holder | SID/SCD |
| Archiving Policy | denypublisher denyfinaldraft12 |
| Read Permission | deny from all and allow from 150.163 |
| 5. Allied materials | |
| Next Higher Units | 8JMKD3MGPCW/3ESR3H2 |
| Dissemination | WEBSCI; PORTALCAPES; SCIELO. |
| Host Collection | sid.inpe.br/banon/2003/08.15.17.40 |
| 6. Notes | |
| Empty Fields | alternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype |
| 7. Description control | |
| e-Mail (login) | marciana |
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