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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/Fmj5u
Repositorysid.inpe.br/marciana/2005/03.04.15.28   (restricted access)
Last Update2005:03.04.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2005/03.04.15.28.19
Metadata Last Update2018:06.05.01.28.49 (UTC) administrator
Secondary KeyINPE-12253-PRE/7583
ISSN0022-0248
Citation KeyFerreiraSittFasc:1996:RoTeBl
TitleRoom temperature blue electroluminescence from the ZnMgCdSe quaternary system
Year1996
MonthFeb.
Access Date2024, Apr. 28
Secondary TypePRE PI
Number of Files1
Size320 KiB
2. Context
Author1 Ferreira, Sukarno O.
2 Sitter, H.
3 Fascinger, W.
Group1 LAS-INPE-MCT-BR
JournalJournal of Crystal Growth
Volume159
Number1-4
Pages640-643
History (UTC)2005-03-04 18:28:20 :: sergio -> administrator ::
2006-09-28 22:37:01 :: administrator -> sergio ::
2008-01-07 12:50:05 :: sergio -> administrator ::
2018-06-05 01:28:49 :: administrator -> marciana :: 1996
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
AbstractWe report on the growth and photoluminescence (PL) characterization of ZnMgCdSe quaternary quantum wells (QW) imbedded in ZnMgSe barriers containing 35% Mg. The ZnMgSe alloys have been recently suggested as alternative base materials for blue light emitting diodes and it has been shown that ZnCdSe QWs in this material yield sharp and intense PL emissions with energies up to 2.7 eV. In this paper we show that the addition of Mg to the QW leads to an increase of the PL peak energy up to 2.9 eV. Light emitting diodes containing these QWs in the active region have been fabricated and have shown good electrical and optical characteristics. They emit at energies up to 2.8 eV at room temperature under cw operation. The FWHM of the electroluminescence line at room temperature is about 45 meV. This relatively broad emission is in part due to the alloy fluctuation in the quaternary QW but also due to the not optimized crystalline quality of the ZnMgSe barrier layers. A big improvement can be expected by the use of GaAs buffer layers and lattice matched substrates like InGaAs.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Room temperature blue...
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4. Conditions of access and use
Languageen
Target Fileroom temperature.pdf
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sergio
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
Empty Fieldsaffiliation alternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn keywords label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup resumeid rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Description control
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