| 1. Identity statement | |
| Reference Type | Journal Article |
| Site | mtc-m16.sid.inpe.br |
| Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
| Identifier | 6qtX3pFwXQZsFDuKxG/Fmjs3 |
| Repository | sid.inpe.br/marciana/2005/03.04.15.47 (restricted access) |
| Last Update | 2005:03.04.03.00.00 (UTC) administrator |
| Metadata Repository | sid.inpe.br/marciana/2005/03.04.15.47.12 |
| Metadata Last Update | 2018:06.05.01.21.34 (UTC) administrator |
| Secondary Key | INPE-12254-PRE/7584 |
| ISSN | 0022-0248 |
| Citation Key | FernandezASLSTACPAPAFSL:2001:ElReBa |
| Title | Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems  |
| Year | 2001 |
| Month | Oct. |
| Access Date | 2024, Apr. 27 |
| Secondary Type | PRE PI |
| Number of Files | 1 |
| Size | 223 KiB |
| 2. Context | |
| Author | 1 Fernandez, J. R. L. 2 Araújo, C. Moysés 3 Silva, Antonio Ferreira da 4 Leite, J. R. 5 Sernelius, E. 6 Tabata, A. 7 Abramof, Eduardo 8 Chitta, V. A. 9 Persson, C. 10 Ahuja, R. 11 Pepe, I. 12 As, D. J. 13 Frey, T. 14 Schikora, D. 15 Lischka, K. |
| Resume Identifier | 1 2 3 8JMKD3MGP5W/3C9JGJC 4 5 6 7 8JMKD3MGP5W/3C9JGUH |
| Group | 1 LAS-INPE-MCT-BR |
| Affiliation | 1 Universidade de São Paulo Instituto de Física, São Paulo, SP, Brazil 2 Universidade Federal da Bahia. Instituto de Física, Salvador, Bahia, Brazil 3 Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden 4 Instituto Nacional de Pesquisas Espaciais (INPE-LAS), São José dos Campos, SP, Brazil 5 Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden 6 Universität Paderborn, FB-6 Physik, D-33095 Paderborn, Germany |
| Journal | Journal of Crystal Growth |
| Volume | 231 |
| Number | 3 |
| Pages | 420-427 |
| History (UTC) | 2006-01-23 12:36:07 :: sergio -> administrator :: 2006-09-28 22:26:07 :: administrator -> sergio :: 2008-01-07 12:54:01 :: sergio -> administrator :: 2018-06-05 01:21:34 :: administrator -> marciana :: 2001 |
| 3. Content and structure | |
| Is the master or a copy? | is the master |
| Content Stage | completed |
| Transferable | 1 |
| Content Type | External Contribution |
| Keywords | A1. Characterization A1. Doping A3. Molecular beam epitaxy B1. Nitrides |
| Abstract | The critical impurity concentration Nc of the metalnonmetal (MNM) transition for the cubic GaN, InN and AlN systems, is calculated using the following two different criteria: vanishing of the donor binding energy and the crossing point between the energies in the metallic and insulating phases. A dielectric function model with a LorentzLorenz correction is used for the insulating phase. The InN presents an order of magnitude increase in Nc as compared to the other two systems. The electrical resistivity of the Si-donor system GaN is investigated theoretically and experimentally from room temperature down to 10 K. It presents a metallic character above a certain high impurity concentration identified as Nc: The samples were grown by plasma assisted molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. The model calculation is carried out from a recently proposed generalized Drude approach (GDA) presenting a very good estimation for the metallic region. The band-gap shift (BGS) of Si-doped GaN has also been investigated above the MNM transition where this shift is observed. Theoretical and experimental results have a rough agreement in a range of impurity concentration of interest. r 2001 Elsevier Science B.V All rights reserve. |
| Area | FISMAT |
| Arrangement | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Electrical resistivity and... |
| doc Directory Content | access |
| source Directory Content | there are no files |
| agreement Directory Content | there are no files |
| 4. Conditions of access and use | |
| Language | en |
| Target File | electrical resistivity.pdf |
| User Group | administrator sergio |
| Visibility | shown |
| Copy Holder | SID/SCD |
| Archiving Policy | denypublisher denyfinaldraft24 |
| Read Permission | deny from all and allow from 150.163 |
| 5. Allied materials | |
| Next Higher Units | 8JMKD3MGPCW/3ESR3H2 |
| Dissemination | WEBSCI; PORTALCAPES. |
| Host Collection | sid.inpe.br/banon/2003/08.15.17.40 |
| 6. Notes | |
| Empty Fields | alternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype |
| 7. Description control | |
| e-Mail (login) | marciana |
| update | |