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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Repositorysid.inpe.br/marciana/2005/07.06.12.36   (restricted access)
Last Update2005:08.10.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2005/07.06.12.36.38
Metadata Last Update2018:06.05.01.28.50 (UTC) administrator
Secondary KeyINPE-4257-PRE/
ISSN0039-6028
Citation KeyAndradaeSilvaLimaSilvLeal:1998:DeStEl
TitleDensity of states of electrons bound to impurities in quantum wells of Gaalas/Gaas
ProjectMATCON: Física da matérica condensada
Year1998
MonthMar.
Access Date2024, Apr. 27
Secondary TypePRE PI
Number of Files1
Size178 KiB
2. Context
Author1 Andrada e Silva, Erasmo Assumpção de
2 Lima, Ivan Costa da Cunha
3 Silva, Antonio Ferreira da
4 Leal, Carlos Eduardo
Resume Identifier1
2 8JMKD3MGP5W/3C9JHDN
3 8JMKD3MGP5W/3C9JGJC
Group1 LAS-INPE-MCT-BR
2 LAS-INPE-MCT-BR
3 LAS-INPE-MCT-BR
4 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
2 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
3 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
4 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
JournalSurface Science
Volume196
Number1-3
Pages352-354
History (UTC)2005-08-10 11:44:55 :: sergio -> administrator ::
2006-09-28 22:37:11 :: administrator -> sergio ::
2008-01-07 12:50:09 :: sergio -> marciana ::
2008-02-25 12:45:50 :: marciana -> administrator ::
2010-05-11 23:12:51 :: administrator -> marciana ::
2011-10-19 11:28:19 :: marciana -> administrator ::
2018-06-05 01:28:50 :: administrator -> marciana :: 1998
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
KeywordsMATERIALS PHYSICS
Density
Impurities
Quantum wells
FÍSICA DE MATERIAIS
Densidade
Impurezas
DOS
AbstractThe DOS for electrons bound to impurities in quantum wells of GaAlAs/GaAS heterostructures is calculated according to a realistic model that takes into account diagonal disorder due to dispersion in binding energy and off-diagonal disorder due to randomness in the transfer matrix element. The first one results from de dependence of the binding energy on the distance of the impurity from the interfaces. The seconde one results from teh structural disorder. A method is presented which applies when the ratio between the impurity layer thickness Delta and the most likely distance between impurities R is small. For instance, if the impurity concentration is 10 15 cm-3 and Delta = 100 A, Delta/R- 0.079. If the well width is in the range 100<=L<=600 A we find that both diagonal and off-diagonal disorder are of the same order, giving a band width in the range 1.2-5.5 meV. The off-diagonal disorder starts to become dominant as the number of impurities per unit area increases.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Density of states...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languageen
Target Filedensity states.pdf
User Groupadministrator
marciana
sergio
Visibilityshown
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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7. Description control
e-Mail (login)marciana
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