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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZGivnJVY/Li3df
Repositorysid.inpe.br/mtc-m16@80/2006/05.29.14.02   (restricted access)
Last Update2006:05.29.14.02.26 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m16@80/2006/05.29.14.02.27
Metadata Last Update2018:06.05.01.28.59 (UTC) administrator
Secondary KeyINPE-13758-PRE/8947
ISSN1434-6060
Citation KeyBerniUedGomBelReu:2000:ExReGl
TitleExperimental results of a dc glow discharge source with controlled plasma floating potential for plasma immersion ion implantation
ProjectImplantação Iônica por Imersão em Plasma (IIIP)
Year2000
Access Date2024, Apr. 27
Secondary TypePRE PI
Number of Files1
Size80 KiB
2. Context
Author1 Berni, Luis Angelo
2 Ueda, Mario
3 Gomes, G. F.
4 Beloto, Antonio Fernando
5 Reuther, H.
Resume Identifier1
2 8JMKD3MGP5W/3C9JHSB
3
4 8JMKD3MGP5W/3C9JGJ8
Group1 LAP-INPE-MCT-BR
2 LAP-INPE-MCT-BR
3 LAP-INPE-MCT-BR
4 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Instituto Nacional de Pesquisas Espaciais (INPE)
4 Instituto Nacional de Pesquisas Espaciais (INPE)
5 Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research
JournalJournal of Physics D: Applied Physics
Volume33
Pages1592-1595
History (UTC)2006-05-29 14:02:27 :: vinicius -> administrator ::
2009-08-12 00:26:13 :: administrator -> vinicius ::
2010-02-01 12:02:22 :: vinicius -> administrator ::
2018-06-05 01:28:59 :: administrator -> marciana :: 2000
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsGlow discharges
plasma immersion ion implantation
AbstractA simple dc glow discharge with controlled plasma floating potential was applied as a novel source for plasma immersion ion implantation with excellent results. The glow discharge source is normally used for the conditioning of fusion device chambers, taking advantage of the available high accelerating potential which is necessary for the ion bombardment of the walls. Combining an electron-emitting hot filament with this source, it was possible to get a stable discharge at pressures as low as 8 × 10−4 mbar and, operating it with potentials lower then 70 V, it was possible to reduce the Si sample etching down to zero from 2500 Å seen at potentials of native 350 V, when exposure times of 750 min were used in the samples surface subjected to plasma ion implantation of nitrogen. As a result, retained ion doses of 1.5 1017 cm−2 were obtained in etching-free Si surfaces.
AreaFISPLASMA
Arrangement 1urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Experimental results of...
Arrangement 2urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAP > Experimental results of...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languageen
Target Fileberni-experimental.pdf
User Groupadministrator
vinicius
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft12
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3ET2RFS
DisseminationWEBSCI; PORTALCAPES.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository month nextedition notes number orcid parameterlist parentrepositories previousedition previouslowerunit progress readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Description control
e-Mail (login)marciana
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