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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZGivnJVY/M3jbb
Repositorysid.inpe.br/mtc-m16@80/2006/08.03.13.58   (restricted access)
Last Update2006:11.23.11.04.23 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m16@80/2006/08.03.13.58.58
Metadata Last Update2018:06.05.01.16.56 (UTC) administrator
Secondary KeyINPE-14333-PRE/9420
ISSN0103-9733
Citation KeyMenguiAbraRappUeta:2006:ChSnFi
TitleCharacterization of SnTe films grown by molecular beam epitaxy
Year2006
MonthJune
Access Date2024, Apr. 28
Secondary TypePRE PN
Number of Files1
Size355 KiB
2. Context
Author1 Mengui, Úrsula Andréia
2 Abramof, Eduardo
3 Rappl, Paulo Henrique de Oliveira
4 Ueta, Antonio Yukio
Resume Identifier1
2 8JMKD3MGP5W/3C9JGUH
3 8JMKD3MGP5W/3C9JJ37
Group1 LAS-INPE-MCT-BR
2 LAS-INPE-MCT-BR
3 LAS-INPE-MCT-BR
4 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
2 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
3 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
4 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
JournalBrazilian Journal of Physics
Volume36
Number2A
Pages324-327
History (UTC)2006-08-03 13:58:58 :: simone -> administrator ::
2006-09-28 22:33:38 :: administrator -> simone ::
2006-11-23 11:04:23 :: simone -> administrator ::
2018-06-05 01:16:56 :: administrator -> marciana :: 2006
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsSnTe
molecular beam epitaxy
BaF2 substrates
TIN TELLURIDE
SPIRAL GROWTH
SI(111)
PBSE
PBTE
AbstractA series of SnTe layers with thicknesses varying from 0.42 to 9.1 mu m were grown by molecular beam epitaxy on (111) BaF2 substrates. The SnTe lattice parameter was found to be 6.331 angstrom as determined from x-ray diffraction spectra measured in the triple-axis configuration. The FWHM of the (222) SnTe x-ray rocking curves indicated a good crystalline quality and an unusual dependence on layer thickness. Atomic force microscopy (AFM) of the SnTe surface revealed spirals with monolayer steps formed around threading dislocations, similar to the PbTe on BaF2 epitaxy.. The dislocation density was estimated from the AFM picture to be 9AC cm(-2). Small black pits corresponding to holes that were left during growth were also observed on the AFM images. Sri diffusion can be a possible reason for these pits and the relatively high dislocation density. Electrical measurements showed that the SnTe epilayers present a typical p-type carrier concentration around 10(20) cm(-3), almost temperature independent and a Hall mobility which decreases from 10(4) to 10(3) cm(2)/V.s as the temperature increases from 10 to 350K.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Characterization of SnTe...
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4. Conditions of access and use
Languageen
Target FileCharacterization of SnTe films.pdf
User Groupadministrator
simone
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft12
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES; SCIELO.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Description control
e-Mail (login)marciana
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