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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16b.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZGivnK2Y/NnN2T
Repositorysid.inpe.br/mtc-m17@80/2006/12.06.13.14   (restricted access)
Last Update2006:12.06.13.14.22 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m17@80/2006/12.06.13.14.23
Metadata Last Update2018:06.05.03.44.17 (UTC) administrator
Secondary KeyINPE-14415-PRE/9499
ISSN0103-9733
Citation KeyPerssonWillAndrSilv:2006:ElBaSt
TitleElectronic band-edge structure, effective masses, and optical absorption of Si1-xGex using an extended FPLAPW/VCA/LDA+U computational method
Year2006
Monthjun.
Access Date2024, Apr. 27
Secondary TypePRE PN
Number of Files1
Size155 KiB
2. Context
Author1 Persson, Clas
2 Willander, Magnus
3 Andrada e Silva, Erasmo Assumpção de
4 Silva, Antônio Ferreira da
Group1
2
3 LAS-INPE-MCT-BR
Affiliation1 IApplied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology
2 Department of Physics, Chalmers University of Technology
3 Instituto Nacional de Pesquisas Espaciais (INPE)
4 Instituto de Física, Universidade Federal da Bahia
JournalBrazilian Journal of Physics
Volume36
Number2
Pages447-450
History (UTC)2006-12-06 13:14:24 :: simone -> administrator ::
2008-06-29 02:29:33 :: administrator -> simone ::
2011-05-20 20:18:04 :: simone -> administrator ::
2012-11-24 01:39:32 :: administrator -> simone :: 2006
2013-02-20 15:19:54 :: simone -> administrator :: 2006
2018-06-05 03:44:17 :: administrator -> marciana :: 2006
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsFPLAPW/VCA/LDA+U
Optical properties
Si1-xGex
AbstractElectronic band-edge structure and optical properties of Si1-xGex are investigated theoretically emloying a full-potential linearized augmented plane wave (FPLAPW) method. The exchange-correlation potential in the local density approximation (LDA) is corrected by an on-site Coulomb potential (i.e., within the LDA+USIC approach) acting asymmetrically on the atomic-like orbitals in the muffin-tin spheres. The electronic structure of the Si1-xGex is calculated self-consistently, assuming a Td symmetrized Hamiltonian and a linear behavior of the valence-band eigenfunctions for Si, SiGe, and Ge with respect to Ge composition x, assuming randomly alloyed crystal structure. i.e., a "virtual-crystal like" approximation (VCA). We show that this approach yields accurate band-gap energies, effective masses, dielectric function, and optical properties of Si1-xGex. We perform absorption measurements showing the band-gap energy for x < 0.25.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Electronic band-edge structure,...
doc Directory Contentaccess
source Directory Contentthere are no files
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4. Conditions of access and use
Languageen
Target FileElectronic band edge.pdf
User Groupadministrator
simone
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft12
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES; SCIELO.
Host Collectionlcp.inpe.br/ignes/2004/02.12.18.39
cptec.inpe.br/walmeida/2003/04.25.17.12
6. Notes
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7. Description control
e-Mail (login)marciana
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