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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16b.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZGivnK2Y/Nvkgh
Repositorysid.inpe.br/mtc-m17@80/2006/12.19.11.12   (restricted access)
Last Update2006:12.19.11.12.40 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m17@80/2006/12.19.11.12.42
Metadata Last Update2018:06.05.03.44.42 (UTC) administrator
Secondary KeyINPE--PRE/
ISSN0925-9635
Citation KeyRodriguesJaMiLeViFr:2006:DeHaAm
TitleDeposition of hard amorphous hydrogenated carbon films by radiofrequency parallel-plate hollow-cathode plasmas
Year2006
Access Date2024, Apr. 27
Secondary TypePRE PI
Number of Files1
Size418 KiB
2. Context
Author1 Rodrigues, Gil Capote
2 Jacobsohn, L. G.
3 Michel, M. D.
4 Lepienski, C. M.
5 Vieira, A. L.
6 Franceschini, D. F.
Group1 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Materials Science & Technology Division, Los Alamos National Laboratory
3 Departamento de Física, Universidade Federal do Paraná
4 Departamento de Física, Universidade Federal do Paraná
5 Instituto de Física, Universidade Federal Fluminense
6 Instituto de Física, Universidade Federal Fluminense
JournalDiamond and Related Materials
VolumeIn press
History (UTC)2006-12-19 11:12:42 :: simone -> administrator ::
2010-05-11 02:48:21 :: administrator -> simone ::
2011-05-29 09:30:09 :: simone -> administrator ::
2012-11-24 01:39:54 :: administrator -> simone :: 2006
2013-02-20 15:19:56 :: simone -> administrator :: 2006
2018-06-05 03:44:42 :: administrator -> marciana :: 2006
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsHollow-cathode
Plasma deposition
Amorphous hydrogenated carbon
Mechanical properties
AbstractHard amorphous hydrogenated carbon (a-C:H) films were deposited by plasma decomposition of CH4 gas in a RF parallel-plate hollow-cathode system. The deposition system was built by placing a metallic plate in parallel to and in electrical contact with an usual RF-PECVD planar cathode. Self-bias versus RF power curves were used to make an initial characterization of plasma discharges in nitrogen gas atmospheres, for pressures between 10 and 100 mTorr. The strongly increased power consumption to obtain the same self-bias in the hollow-cathode system evidenced an increase in plasma density. The a-C:H films were deposited onto Si single crystalline substrates, in the − 50 to − 500 V self-bias range, at 5, 10 and 50 mTorr deposition pressures. The film deposition rate was found to be about four times than that usually observed for single-cathode RF-PECVD-deposited films, under methane atmosphere, at similar pressure and self-bias conditions. Characterization of film structure was carried out by Raman spectroscopy on films deposited at 10 and 50 mTorr pressures. Gaussian deconvolution of the Raman spectra in its D and G bands shows a continuous increase in the ID/IG integrated band intensity ratio upon self-bias increase, obeying the expected increasing behavior of the sp2 carbon atom fraction. The peak position of the G band was found to increase up to − 300 V self-bias, showing a nearly constant behavior for higher self-bias absolute values. On the other hand, the G band width showed a nearly constant behavior within the entire self-bias range. Nanohardness measurements have shown that films deposited with self-bias greater than 300 V are as hard as films obtained by the usual PECVD techniques, showing a maximum hardness of about 18 GPa. Films were also found to develop high internal compressive stress. The stress dependence on self-bias showed a strong maximum at about − 200 V self-bias, with a maximum stress value of about 5 GPa.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Deposition of hard...
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4. Conditions of access and use
Languageen
Target FileDeposition of hard.pdf
User Groupadministrator
simone
Visibilityshown
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionlcp.inpe.br/ignes/2004/02.12.18.39
cptec.inpe.br/walmeida/2003/04.25.17.12
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyholder copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository month nextedition notes number orcid pages parameterlist parentrepositories previousedition previouslowerunit progress project readergroup resumeid rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
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