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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16d.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP7W/36HPN85
Repositorysid.inpe.br/mtc-m19@80/2009/12.10.13.17   (restricted access)
Last Update2009:12.10.13.17.54 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m19@80/2009/12.10.13.17.56
Metadata Last Update2018:06.05.04.36.01 (UTC) administrator
Secondary KeyINPE--PRE/
DOI10.1016/j.diamond.2009.05.002
ISSN0925-9635
Citation KeyBarbosaAlSiFeTrCo:2009:InSuTe
TitleInfluence of substrate temperature on formation of ultrananocrystalline diamond films deposited by HFCVD argon-rich gas mixture
Year2009
MonthOct.
Access Date2024, Apr. 27
Secondary TypePRE PI
Number of Files1
Size537 KiB
2. Context
Author1 Barbosa, Divani Carvalho
2 Almeida, F. A.
3 Silva, R. F.
4 Ferreira, Neidenêi Gomes
5 Trava-Airoldi, Vladimir Jesus
6 Corat, Evaldo José
Resume Identifier1
2
3
4 8JMKD3MGP5W/3C9JHU3
5
6 8JMKD3MGP5W/3C9JH33
Group1 LAS-CTE-INPE-MCT-BR
2
3
4 LAS-CTE-INPE-MCT-BR
5 LAS-CTE-INPE-MCT-BR
6 LAS-CTE-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Ceramics Glass Engineering Department, University of Aveiro
3 Ceramics Glass Engineering Department, University of Aveiro
4 Instituto Nacional de Pesquisas Espaciais (INPE)
5 Instituto Nacional de Pesquisas Espaciais (INPE)
6 Instituto Nacional de Pesquisas Espaciais (INPE)
JournalDiamond and Related Materials
Volume18
Number10
Pages1283-1288
Secondary MarkB2_ASTRONOMIA_/_FÍSICA A1_ENGENHARIAS_II A1_ENGENHARIAS_III B2_ENGENHARIAS_IV A1_MATERIAIS
History (UTC)2009-12-10 13:18:25 :: simone -> administrator ::
2010-05-11 01:02:49 :: administrator -> simone ::
2011-05-02 04:05:15 :: simone -> administrator ::
2018-06-05 04:36:01 :: administrator -> marciana :: 2009
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsDiamond
HFCVD
Activation energy
Growth kinetics
sp2 growth
AbstractThe influence of the substrate temperature on the formation of ultrananocrystalline diamond (UNCD) thin films, prepared by an argon-based hot filament chemical vapor deposition (HFCVD), is discussed in this work. The gas mixture used for diamond growth was 1 vol.% methane, 9 vol.% hydrogen and 90 vol.% argon at a total flow rate of 200 sccm and at a total pressure of 30 Torr. The substrate temperature range was from 550 to 850 °C at deposition time of 8 h. Mass growth rate was determined at different deposition temperatures. The activation energy for UNCD growth, determined from the Arrhenius plot, was lower (5.7 kcal/mol) than the values found for standard diamond deposition (around 11 kcal/mol). In this work, we suggest that the activation energy was lower because the growth of these films occurs at conditions that there is a high growth competition between diamond phase and sp2 phases. To support this hypothesis, systematic characterization studies based on Raman scattering spectroscopy, high-resolution X-ray diffractometry and high-resolution scanning electron microscopy were performed.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Influence of substrate...
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4. Conditions of access and use
Languageen
Target Fileinfluence of substrade.pdf
User Groupadministrator
simone
Visibilityshown
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Mirror Repositorysid.inpe.br/mtc-m19@80/2009/08.21.17.02.53
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/mtc-m19@80/2009/08.21.17.02
6. Notes
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7. Description control
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