| 1. Identity statement | |
| Reference Type | Journal Article |
| Site | mtc-m16d.sid.inpe.br |
| Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
| Identifier | 8JMKD3MGP7W/37JU2K5 |
| Repository | sid.inpe.br/mtc-m19@80/2010/06.01.18.05 (restricted access) |
| Last Update | 2010:06.01.18.05.54 (UTC) administrator |
| Metadata Repository | sid.inpe.br/mtc-m19@80/2010/06.01.18.05.55 |
| Metadata Last Update | 2018:06.05.04.36.43 (UTC) administrator |
| Secondary Key | INPE--PRE/ |
| DOI | 10.1016/j.diamond.2010.01.042 |
| ISSN | 0925-9635 |
| Citation Key | MirandaBraBalBelFer:2010:ImCVPr |
| Title | Improvements in CVD/CVI processes for optimizing nanocrystalline diamond growth into porous silicon  |
| Year | 2010 |
| Month | July-Sept. |
| Access Date | 2024, Apr. 28 |
| Secondary Type | PRE PI |
| Number of Files | 1 |
| Size | 506 KiB |
| 2. Context | |
| Author | 1 Miranda, C. R. B. 2 Braga, N. A. 3 Baldan, Maurício Ribeiro 4 Beloto, Antonio Fernando 5 Ferreira, Neidenei Gomes |
| Resume Identifier | 1 2 3 8JMKD3MGP5W/3C9JHTA 4 8JMKD3MGP5W/3C9JGJ8 5 8JMKD3MGP5W/3C9JHU3 |
| Group | 1 LAS-CTE-INPE-MCT-BR 2 LAS-CTE-INPE-MCT-BR 3 LAS-CTE-INPE-MCT-BR 4 LAS-CTE-INPE-MCT-BR 5 LAS-CTE-INPE-MCT-BR |
| Affiliation | 1 Instituto Nacional de Pesquisas Espaciais (INPE) 2 Instituto Nacional de Pesquisas Espaciais (INPE) 3 Instituto Nacional de Pesquisas Espaciais (INPE) 4 Instituto Nacional de Pesquisas Espaciais (INPE) 5 Instituto Nacional de Pesquisas Espaciais (INPE) |
| Journal | Diamond and Related Materials |
| Volume | 19 |
| Number | 7 Sp. Iss. SI |
| Pages | 760-763 |
| Secondary Mark | B2_ASTRONOMIA_/_FÍSICA A1_ENGENHARIAS_II A2_ENGENHARIAS_III A1_ENGENHARIAS_IV A1_MATERIAIS B1_QUÍMICA |
| History (UTC) | 2010-07-05 14:54:46 :: simone -> marciana :: 2010 2011-04-17 20:26:50 :: marciana -> administrator :: 2010 2018-06-05 04:36:43 :: administrator -> marciana :: 2010 |
| 3. Content and structure | |
| Is the master or a copy? | is the master |
| Content Stage | completed |
| Transferable | 1 |
| Content Type | External Contribution |
| Keywords | Nanodiamond Porous silicon Chemical vapor infiltration |
| Abstract | This paper reports a novel procedure to infiltrate nanocrystalline diamond films (NCD) on porous silicon (PS) substrate. The NCD/PS films resulted in a composite material, with great potential for electrochemical application, mainly due to its high active surface area. The Hot Filament Chemical Vapor Deposition reactor was changed to Hot Filament Chemical Vapor Infiltration reactor in order to grow NCD films infiltrated into deep holes of PS substrate. This procedure allowed the infiltration of the reacting gases into the porous structure where the nucleation takes place, followed by the coalescence and film formation at pore bottoms and walls. In this configuration an additional entrance of CH4 was located next to the PS substrate using two distinct positions called underneath and above, with the use of the additional flow accurately underneath or above of the samples. In general, the combination of these two configurations with additional carbon sources provided NCD film infiltration in PS substrate with success with only 60 min of growing time. Particularly, the films obtained from the positions called above presented the best morphology, with high quality and crystallinity, confirmed from its scanning electron microscopy, Raman scattering spectroscopy and high resolution X-ray diffraction spectra, respectively. |
| Area | FISMAT |
| Arrangement | urlib.net > LABAS > Improvements in CVD/CVI... |
| doc Directory Content | access |
| source Directory Content | there are no files |
| agreement Directory Content | there are no files |
| 4. Conditions of access and use | |
| Language | en |
| Target File | improvements in cvd.pdf |
| User Group | administrator marciana simone |
| Visibility | shown |
| Archiving Policy | denypublisher denyfinaldraft24 |
| Read Permission | deny from all and allow from 150.163 |
| Update Permission | not transferred |
| 5. Allied materials | |
| Mirror Repository | sid.inpe.br/mtc-m19@80/2009/08.21.17.02.53 |
| Next Higher Units | 8JMKD3MGPCW/3ESR3H2 |
| Dissemination | WEBSCI; PORTALCAPES; COMPENDEX. |
| Host Collection | sid.inpe.br/mtc-m19@80/2009/08.21.17.02 |
| 6. Notes | |
| Empty Fields | alternatejournal archivist callnumber copyholder copyright creatorhistory descriptionlevel e-mailaddress electronicmailaddress format isbn label lineage mark nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype |
| 7. Description control | |
| e-Mail (login) | marciana |
| update | |