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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16b.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZGivnK2Y/Sq6Cw
Repositorysid.inpe.br/mtc-m17@80/2007/12.10.17.01   (restricted access)
Last Update2007:12.10.17.01.32 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m17@80/2007/12.10.17.01.33
Metadata Last Update2018:06.05.03.36.14 (UTC) administrator
Secondary KeyINPE-15049-PRE/9958
DOI10.1016/j.jcrysgro.2007.07.044
ISSN0022-0248
Citation KeyDíazRappAbra:2007:MoBeEp
TitleMolecular beam epitaxial growth of EuTe/SnTe strained superlattices
Year2007
MonthOct.
Access Date2024, May 02
Secondary TypePRE PI
Number of Files1
Size427 KiB
2. Context
Author1 Díaz, Beatriz
2 Rappl, Paulo Henrique de Oliveira
3 Abramof, Eduardo
Resume Identifier1
2 8JMKD3MGP5W/3C9JJ37
3 8JMKD3MGP5W/3C9JGUH
Group1 LAS-INPE-MCT-BR
2 LAS-INPE-MCT-BR
3 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Instituto Nacional de Pesquisas Espaciais (INPE)
JournalJournal of Crystal Growth
Volume308
Number1
Pages218-222
History (UTC)2007-12-19 16:45:02 :: simone -> administrator ::
2008-06-29 02:38:57 :: administrator -> simone ::
2011-02-22 17:45:13 :: simone -> administrator ::
2012-10-24 00:11:16 :: administrator -> simone :: 2007
2013-02-20 15:20:13 :: simone -> administrator :: 2007
2018-06-05 03:36:14 :: administrator -> marciana :: 2007
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsA1. High resolution X-ray diffraction
A1. Reflection high energy electron diffraction
A3. Molecular beam epitaxy
A3. Superlattices
B2. Semiconducting materials
AbstractIn this work, we report on the growth of EuTe/SnTe superlattices (SLs) on BaF2 (1 1 1) substrates by molecular beam epitaxy. Reflection high energy electron diffraction allowed to find the growth modes at each growth stage, while high resolution X-ray diffraction (HRXRD) was employed to evaluate the heterostructure crystalline quality. In four subsequent stages, we studied the growth of SnTe buffer layers, the growth of EuTe on SnTe, the growth of SnTe on EuTe, and finally undertook the SLs growth. EuTe grows in the Stranski-Krastanov mode on SnTe, with a critical thickness for island formation that increases for lower temperatures and higher Te/Eu flux ratios. On the other hand, SnTe starts growing in the Volmer-Weber mode on EuTe, with evolution to layer-by-layer growth after the SnTe islands merge, which occurs faster for higher temperatures. As confirmed by HRXRD ù / 2 è scans measured along the (2 2 2) SL Bragg peak, high structural quality EuTe/SnTe SLs were grown with EuTe layers below the critical thickness for island formation and SnTe layers thick enough for layer-by-layer growth to be restored. The X-ray spectra were fitted with those calculated using dynamical diffraction theory in order to find accurately the individual layer thicknesses and strain status.
AreaFISMAT
Arrangementurlib.net > LABAS > Molecular beam epitaxial...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languageen
Target Filemolecular beam.pdf
User Groupadministrator
simone
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; PORTALCAPES.
Host Collectionlcp.inpe.br/ignes/2004/02.12.18.39
cptec.inpe.br/walmeida/2003/04.25.17.12
6. Notes
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7. Description control
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