1. Identity statement | |
Reference Type | Journal Article |
Site | mtc-m21c.sid.inpe.br |
Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
Identifier | 8JMKD3MGP3W34R/3SR74BS |
Repository | sid.inpe.br/mtc-m21c/2019/02.28.11.19 (restricted access) |
Last Update | 2019:02.28.11.19.54 (UTC) administrator |
Metadata Repository | sid.inpe.br/mtc-m21c/2019/02.28.11.19.54 |
Metadata Last Update | 2019:03.24.01.36.45 (UTC) administrator |
DOI | 10.1117/12.130764 |
Citation Key | Trava-AiroldiRodrFukuBara:1992:ChDiFi |
Title | Characterization of diamond films deposited by hot-filament CVD using CF4 as doping gas by Raman spectroscopy, FTIR spectroscopy, and atomic force microscopy |
Year | 1992 |
Access Date | 2024, May 08 |
Type of Work | conference paper |
Number of Files | 1 |
Size | 700 KiB |
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2. Context | |
Author | 1 Trava-Airoldi, Vladimir Jesus 2 Rodrigues, C. R. 3 Fukui, M. 4 Baranauskas, V. |
Group | 1 CMC-INPE-MCT-BR |
Affiliation | 1 2 Universidade Estadual de Campinas (UNICAMP) 3 Universidade Estadual de Campinas (UNICAMP) 4 Universidade Estadual de Campinas (UNICAMP) |
Author e-Mail Address | 1 vladimir.airoldi@inpe.br |
Journal | Proceeding of SPIE Diamond Optics |
Volume | 1759 |
Pages | 87-96 |
History (UTC) | 2019-02-28 11:20:53 :: simone -> administrator :: 1992 2019-03-24 01:36:45 :: administrator -> simone :: 1992 |
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3. Content and structure | |
Is the master or a copy? | is the master |
Content Stage | completed |
Transferable | 1 |
Content Type | External Contribution |
Version Type | publisher |
Abstract | Diamond films have been deposited by hot-filament CVD on silicon using either a gas mixture of pure methane-hydrogen or a mixture of methane-hydrogen and carbon-tetrafluoride, for the study of the influence of the fluorine radicals in the growth process. Raman spectra shows that the fluorine is effective in the etching of non-diamond bonds since the corresponding Raman shift at 1550 cm1 due to sp2 was not observed in the films deposited with the CF1JCH4 gas mixture. Also the FTIR spectra of these films show a better transmittance in the range from 500 cm1 to 4000 cm1, and an apparent increase of the SiC layer thickness. Using the same thermodinamical conditions, with the CF1JCH4 gas mixture diamond films of high quality are deposited at a higher growth rate. AFM measurements of the surface morphology indicates apparently the same vertical roughness in both kinds of films but larger lateral coalescence in the films produced with CF4- content. |
Area | ETES |
doc Directory Content | access |
source Directory Content | there are no files |
agreement Directory Content | |
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4. Conditions of access and use | |
Language | en |
Target File | 87.pdf |
User Group | simone |
Visibility | shown |
Read Permission | deny from all and allow from 150.163 |
Update Permission | not transferred |
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5. Allied materials | |
Mirror Repository | urlib.net/www/2017/11.22.19.04.03 |
Host Collection | urlib.net/www/2017/11.22.19.04 |
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6. Notes | |
Notes | Event: San Diego '92, 1992, San Diego, CA, United States |
Empty Fields | alternatejournal archivingpolicy archivist callnumber copyholder copyright creatorhistory descriptionlevel dissemination e-mailaddress format isbn issn keywords label lineage mark month nextedition nexthigherunit number orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup resumeid rightsholder schedulinginformation secondarydate secondarykey secondarymark secondarytype session shorttitle sponsor subject tertiarymark tertiarytype url |
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7. Description control | |
e-Mail (login) | simone |
update | |
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