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1. Identity statement
Reference TypeJournal Article
Sitemtc-m21c.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34R/3SR74BS
Repositorysid.inpe.br/mtc-m21c/2019/02.28.11.19   (restricted access)
Last Update2019:02.28.11.19.54 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m21c/2019/02.28.11.19.54
Metadata Last Update2019:03.24.01.36.45 (UTC) administrator
DOI10.1117/12.130764
Citation KeyTrava-AiroldiRodrFukuBara:1992:ChDiFi
TitleCharacterization of diamond films deposited by hot-filament CVD using CF4 as doping gas by Raman spectroscopy, FTIR spectroscopy, and atomic force microscopy
Year1992
Access Date2024, May 08
Type of Workconference paper
Number of Files1
Size700 KiB
2. Context
Author1 Trava-Airoldi, Vladimir Jesus
2 Rodrigues, C. R.
3 Fukui, M.
4 Baranauskas, V.
Group1 CMC-INPE-MCT-BR
Affiliation1
2 Universidade Estadual de Campinas (UNICAMP)
3 Universidade Estadual de Campinas (UNICAMP)
4 Universidade Estadual de Campinas (UNICAMP)
Author e-Mail Address1 vladimir.airoldi@inpe.br
JournalProceeding of SPIE Diamond Optics
Volume1759
Pages87-96
History (UTC)2019-02-28 11:20:53 :: simone -> administrator :: 1992
2019-03-24 01:36:45 :: administrator -> simone :: 1992
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
AbstractDiamond films have been deposited by hot-filament CVD on silicon using either a gas mixture of pure methane-hydrogen or a mixture of methane-hydrogen and carbon-tetrafluoride, for the study of the influence of the fluorine radicals in the growth process. Raman spectra shows that the fluorine is effective in the etching of non-diamond bonds since the corresponding Raman shift at 1550 cm1 due to sp2 was not observed in the films deposited with the CF1JCH4 gas mixture. Also the FTIR spectra of these films show a better transmittance in the range from 500 cm1 to 4000 cm1, and an apparent increase of the SiC layer thickness. Using the same thermodinamical conditions, with the CF1JCH4 gas mixture diamond films of high quality are deposited at a higher growth rate. AFM measurements of the surface morphology indicates apparently the same vertical roughness in both kinds of films but larger lateral coalescence in the films produced with CF4- content.
AreaETES
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4. Conditions of access and use
Languageen
Target File87.pdf
User Groupsimone
Visibilityshown
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Mirror Repositoryurlib.net/www/2017/11.22.19.04.03
Host Collectionurlib.net/www/2017/11.22.19.04
6. Notes
NotesEvent: San Diego '92, 1992, San Diego, CA, United States
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