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1. Identity statement
Reference TypeJournal Article
Sitemtc-m21c.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34R/3SR7HJL
Repositorysid.inpe.br/mtc-m21c/2019/02.28.14.00   (restricted access)
Last Update2019:02.28.14.00.28 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m21c/2019/02.28.14.00.28
Metadata Last Update2021:07.28.22.27.56 (UTC) administrator
DOI10.1116/1.1385915
Citation KeyWuMAFMNDCR:2001:MoBeEp
TitleMolecular beam epitaxial growth of IV–VI multiple quantum well structures on Si„111… and BaF2„111… and optical studies of epilayer heating
Year2001
Monthjul./aug.
Access Date2024, May 08
Type of Workconference paper
Number of Files1
Size210 KiB
2. Context
Author1 Wu, H. Z.
2 McCann, P. J.
3 Alkhouli, O.
4 Fang, X. M.
5 McAlister, D.
6 Namjou, K.
7 Dai, N.
8 Chung, S. J.
9 Rappl, Paulo Henrique de Oliveira
Group1
2
3
4
5
6
7
8
9 LAS-INPE-MCT-BR
Affiliation1 University of Oklahoma
2 University of Oklahoma
3 University of Oklahoma
4 University of Oklahoma
5 University of Oklahoma
6 University of Oklahoma
7 University of Oklahoma
8 University of Oklahoma
9 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1
2
3
4
5
6
7
8
9 paulo.rappl@inpe.br
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume19
Number4
Pages1447-1454
History (UTC)2019-02-28 14:01:14 :: simone -> administrator :: 2001
2021-07-28 22:27:56 :: administrator -> simone :: 2001
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
AbstractIVVI semiconductor multiple quantum well ~MQW! structures ~PbSe/PbSrSe! were grown on Si~111! and BaF2~111! substrates by molecular beam epitaxy. Structural and optical properties of the MQW structures have been studied using reflection high-energy electron diffraction, high resolution x-ray diffraction ~HRXRD!, Fourier-transform infrared ~FTIR! transmission, and midinfrared photoluminescence ~PL!. Numerous satellite diffraction peaks and narrow linewidths of the HRXRD rocking curves indicate the high crystalline quality of the structures grown on both Si and BaF2. Longitudinal and oblique valley subband transitions without superposed interference fringes were observed in FTIR differential transmission spectra. Continuous wave midinfrared photoluminescence was also observed from both sets of samples. Comparison of FTIR and PL spectra allows determination of localized epilayer heating in the MQW samples due to optical pumping. For a typical laser pumping power of 9.1 W/cm2 the heating in a MQW layer on Si~111! was 70 °C, while the amount of heating for a MQW layer on lower thermal conductivity BaF2 was 83 °C.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Molecular beam epitaxial...
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4. Conditions of access and use
Languageen
Target Filewu_molecular.pdf
User Groupsimone
Visibilityshown
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Mirror Repositoryurlib.net/www/2017/11.22.19.04.03
Next Higher Units8JMKD3MGPCW/3ESR3H2
Host Collectionurlib.net/www/2017/11.22.19.04
6. Notes
Notes19th North American Conference on Molecular Epitaxy, Tempe, Arizona - USA, 15-18 out. 2000.
Empty Fieldsalternatejournal archivingpolicy archivist callnumber copyholder copyright creatorhistory descriptionlevel dissemination e-mailaddress format isbn issn keywords label lineage mark nextedition orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup resumeid rightsholder schedulinginformation secondarydate secondarykey secondarymark secondarytype session shorttitle sponsor subject tertiarymark tertiarytype url
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